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| FDS7064N7 February 2004 FDS7064N7 30V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for "low side" synchronous rectifier operation, providing an extremely low RDS(ON) in a small package. Features * 16.5 A, 30 V RDS(ON) = 7.0 m @ VGS = 4.5 V * High performance trench technology for extremely low RDS(ON) * High power and current handling capability * Fast switching * FLMP SO-8 package: Enhanced thermal performance in industry-standard package size Applications * Synchronous rectifier * DC/DC converter S D Bottomless SO-8 S D D S DS D 5 6 Bottom-side Drain Contact 4 3 2 1 Pin 1 SO-8 G SG S S SS S TA=25oC unless otherwise noted 7 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Parameter Ratings 30 12 (Note 1a) Units V V A W C 16.5 60 3.0 -55 to +150 Power Dissipation for Single Operation (Note 1a) Operating and Storage Junction Temperature Range Thermal Characteristics RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) 40 0.5 C/W C/W Package Marking and Ordering Information Device Marking FDS7064N7 Device FDS7064N7 Reel Size 13'' Tape width 12mm Quantity 2500 units 2004 Fairchild Semiconductor Corporation FDS7064N7 Rev D1 (W) FDS7064N7 Electrical Characteristics Symbol BVDSS BVDSS TJ IDSS IGSSF IGSSR VGS(th) VGS(th) TJ RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD Notes: TA = 25C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse (Note 2) Test Conditions VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25C VDS = 24 V, VGS = 0 V VGS = 12 V, VDS = 0 V VGS = -12 V , VDS = 0 V VDS = VGS, ID = 250 A ID = 250 A, Referenced to 25C VGS = 4.5 V, ID = 16.5 A VGS = 4.5 V, ID = 16.5 A,TJ = 125C VDS = 5 V, ID = 16.5 A Min 30 Typ Max Units V Off Characteristics 23 1 100 -100 mV/C A nA nA On Characteristics Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance Forward Transconductance 0.8 1.2 -4.3 5.7 8.4 112 2 V mV/C 7.0 10.5 m S Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) VDS = 15 V, V GS = 0 V, f = 1.0 MHz 3355 522 209 pF pF pF Switching Characteristics Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 15 V, ID = 1 A, VGS = 4.5 V, RGEN = 6 17 13 54 26 30 23 86 42 48 ns ns ns ns nC nC nC VDS = 15 V, ID = 16.5 A, VGS = 4.5 V 30 6.3 7.7 Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward VGS = 0 V, IS = 2.5 A Voltage 2.5 (Note 2) A V 0.7 1.2 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 40C/W when mounted on a 1in2 pad of 2 oz copper b) 85C/W when mounted on a minimum pad of 2 oz copper Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% FDS7064N7 Rev D1 (W) FDS7064N7 Typical Characteristics 3 VGS = 10V 50 ID, DRAIN CURRENT (A) 40 30 4.5V 2.5V 3.5V 3.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 60 2.5 VGS = 2.0V 2 2.5V 3.0V 3.5V 4.5V 2.0V 20 10 0 0 0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) 1.5 1 10V 0.5 0 10 20 30 40 50 ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.018 RDS(ON), ON-RESISTANCE (OHM) 1.8 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.6 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (oC) ID = 16.5A VGS = 10V ID = 8A 0.014 0.01 TA = 125oC 0.006 TA = 25oC 0.002 1 2.5 4 5.5 7 8.5 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation withTemperature. 60 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 IS, REVERSE DRAIN CURRENT (A) VGS = 0V 10 1 0.1 0.01 0.001 0.0001 TA = 125oC 25oC -55oC VDS = 5V 50 ID, DRAIN CURRENT (A) 40 30 TA = 125oC 20 25oC 10 0 1 1.25 1.5 1.75 2 2.25 2.5 VGS, GATE TO SOURCE VOLTAGE (V) -55oC 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS7064N7 Rev D1 (W) FDS7064N7 Typical Characteristics 5 VGS, GATE-SOURCE VOLTAGE (V) ID = 16.5A 4 CAPACITANCE (pF) 4500 VDS = 10V 15V 20V 4000 3500 3000 2500 2000 1500 1000 500 CISS f = 1MHz VGS = 0 V 3 2 1 COSS CRSS 0 5 10 15 20 25 30 0 0 5 10 15 20 25 30 35 Qg, GATE CHARGE (nC) 0 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 100 P(pk), PEAK TRANSIENT POWER (W) 100s RDS(ON) LIMIT ID, DRAIN CURRENT (A) 10 1s 1 VGS = 10V SINGLE PULSE RJA = 88oC/W TA = 25oC 0.01 0.01 0.1 1 10 100 DC 10ms 100ms 1ms 50 Figure 8. Capacitance Characteristics. 40 SINGLE PULSE RJA = 88C/W TA = 25C 30 20 0.1 10 0 0.01 0.1 1 t1, TIME (sec) 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 R JA(t) = r(t) + R JA R JA = 85 C/W 0.1 0.1 0.05 P(pk) 0.02 t1 t2 T J - T A = P * R JA (t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.01 0.01 0.001 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDS7064N7 Rev D1 (W) FDS7064N7 Dimensional Outline and Pad Layout FDS7064N7 Rev D1 (W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FACT Quiet SeriesTM ActiveArrayTM FAST BottomlessTM FASTrTM CoolFETTM FPSTM CROSSVOLTTM FRFETTM DOMETM GlobalOptoisolatorTM EcoSPARKTM GTOTM E2CMOSTM HiSeCTM EnSignaTM I2CTM FACTTM ImpliedDisconnectTM Across the board. Around the world.TM The Power FranchiseTM Programmable Active DroopTM DISCLAIMER ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC OPTOPLANARTM PACMANTM POPTM Power247TM PowerSaverTM PowerTrench QFET QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SILENT SWITCHER SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic TINYOPTOTM TruTranslationTM UHCTM UltraFET VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I8 |
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